2002. 2. 20 1/2 semiconductor technical data 2n3906c epitaxial planar pnp transistor revision no : 1 general purpose application. switching application. features low leakage current : i cex =-50na(max.), i bl =-50na(max.) @v ce =-30v, v eb =-3v. excellent dc current gain linearity. low saturation voltage : v ce(sat) =-0.4v(max.) @i c =-50ma, i b =-5ma. low collector output capacitance : c ob =4.5pf(max.) @v cb =5v. complementary to 2n3904c. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. base 2. collector + _ characteristic symbol rating unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v collector current i c -200 ma base current i b -50 ma collector power dissipation ta=25 p c 625 mw tc=25 1.5 w junction temperature t j 150 storage temperature range t stg -55 150
2002. 2. 20 2/2 revision no : 1 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =-30v, v eb =-3v - - -50 na base cut-off current i bl v ce =-30v, v eb =-3v - - -50 na collector-base breakdown voltage v (br)cbo i c =-10 a, i e =0 -40 - - v collector-emitter breakdown voltage * v (br)ceo i c =-1ma, i b =0 -40 - - v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5.0 - - v dc current gain * h fe (1) v ce =-1v, i c =-0.1ma 60 - - h fe (2) v ce =-1v, i c =-1ma 80 - - h fe (3) v ce =-1v, i c =-10ma 100 - 300 h fe (4) v ce =-1v, i c =-50ma 60 - - h fe (5) v ce =-1v, i c =-100ma 30 - - collector-emitter saturation voltage * v ce(sat) 1 i c =-10ma, i b =-1ma - - -0.25 v v ce(sat) 2 i c =-50ma, i b =-5ma - - -0.4 base-emitter saturation voltage * v be(sat) 1 i c =-10ma, i b =-1ma -0.65 - -0.85 v v be(sat) 2 i c =-50ma, i b =-5ma - - -0.95 transition frequency f t v ce =-20v, i c =-10ma, f=100mhz 250 - - mhz collector output capacitance c ob v cb =-5v, i e =0, f=1mhz - - 4.5 pf input capacitance c ib v be =-0.5v, i c =0, f=1mhz - - 10 pf input impedance h ie v ce =-10v, i c =-1ma, f=1khz 2.0 - 12 k voltage feedback ratio h re 1.0 - 10 x10 -4 small-signal current gain h fe 100 - 400 collector output admittance h oe 3.0 - 60 noise figure nf v ce =-5v, i c =-0.1ma, rg=1k , f=10hz 15.7khz - - 4.0 db switching time delay time t d v out total 4pf c 10k ? 275 ? v =-3.0v cc 300ns -10.6v 0.5v 0 t ,t < 1ns, du=2% r in v f - - 35 ns rise time t r - - 35 storage time t stg 20 s 1n916 or equiv. -10.9v 9.1v v out total 4pf c v =-3.0v cc 275 ? 10k ? v in 0 t ,t < 1ns, du=2% rf - - 225 fall time t f - - 75 2n3906c * pulse test : pulse width 300 s, duty cycle 2%.
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